| PART |
Description |
Maker |
| KVR133X64C3L256 KVR133X64C3L_256 KVR133X64C3L/256 |
256MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 256MB6米x位的PC133 CL3超薄168针DIMM
256MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 256MB6x位的PC133 CL3超薄168针DIMM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
|
| KVR133X64C3Q256 KVR133X64C3Q_256 KVR133X64C3Q/256 |
256MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 256MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| KVR133X64C3L64 KVR133X64C3L_64 KVR133X64C3L/64 |
64MB 8M x 64-BIT PC133 CL3 168-PIN DIMM Module
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| KVR133X64C2/256 |
256MB 32M x 64-Bit PC133 CL2 168-Pin DIMM Module
|
Kingston Technology
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K1B5616BAM K1B5616BBM |
256Mb (16M x 16 bit) UtRAM
|
Samsung Electronics
|
| V436516R04VATG-75 |
3.3 VOLT 16M x 64 using 8M x 16 PC133 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| V436516Z04VTG-75 |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
MOSEL[Mosel Vitelic, Corp]
|
| HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 |
16M x 4 Bit 8k DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
